SVD12N60T/f_datasheet 12a, 600v n-channel mosfet general description SVD12N60T/f is an n-channel enhancement mode power mos field effect transistor which is produced using silan proprietary s-rin tm structure dmos technology. the improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are widely used in ac-dc power suppliers, dc-dc converters and h-bridge pwm motor drivers. features ? 12a,600v,r ds(on)(typ) =0.58 @v gs =10v ? low gate charge ? low crss ? fast switching ? improved dv/dt capability nomenclature ordering specifications part no. package marking material packing SVD12N60T to-220-3l SVD12N60T pb free tube svd12n60f to-220f-3l svd12n60f pb free tube hangzhou silan microelectronics co.,ltd rev:1.2 2010.10.21 http://www.silan.com.cn page 1 of 8
SVD12N60T/f_datasheet hangzhou silan microelectronics co.,ltd rev:1.2 2010.10.21 http://www.silan.com.cn page 2 of 8 absolute maximum ratings (t c =25 c unless otherwise noted) rating parameter symbol SVD12N60T svd12n60f unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v drain current i d 12 a drain current pulsed i dm 48 a 225 51 w power dissipation(t c =25 c) -derate above 25 c p d 1.8 0.41 w/ c single pulsed avalanche energy (note 1) e as 1206 mj operation junction temperature tj 150 c storage temperature t stg -55 +150 c thermal characteristics rating parameter symbol SVD12N60T svd12n60f unit thermal resistance, junction-to-case r jc 0.56 2.44 c/w thermal resistance, junction-to-ambient r ja 62.5 120 c/w electrical characteristics (t c =25 c unless otherwise noted) parameter symbol test conditions min. typ. max. unit drain -source breakdown voltage b vdss v gs =0v, i d =250a 600 -- -- v drain-source leakage current i dss v ds =600v, v gs =0v -- -- 10 a gate-source leakage current i gss v gs =30v, v ds =0v -- -- 100 na gate threshold voltage v gs(th) v gs = v ds , i d =250a 2.0 -- 4.0 v static drain- source on state resistance r ds(on) v gs =10v, i d =6.0a -- 0.58 0.8 input capacitance c iss -- 1876 -- output capacitance c oss -- 167 -- reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz -- 20 -- pf turn-on delay time t d(on) -- 30 -- turn-on rise time t r -- 79 -- turn-off delay time t d(off) -- 150 -- turn-off fall time t f v dd =300v,i d =12a, rg=25 (note 2,3) -- 89 -- ns total gate charge q g -- 51.7 -- gate-source charge q gs -- 9.6 -- gate-drain charge q gd v ds =480v,i d =12a, v gs =10v (note 2,3) -- 18.6 -- nc
SVD12N60T/f_datasheet source-drain diode ratings and characteristics parameter symbol test conditions min. typ. max. unit continuous source current i s -- -- 12 pulsed source current i sm integral reverse p-n junction diode in the mosfet -- -- 48 a diode forward voltage v sd i s =12a,v gs =0v -- -- 1.4 v reverse recovery time t rr -- 420 -- hangzhou silan microelectronics co.,ltd rev:1.2 2010.10.21 http://www.silan.com.cn page 3 of 8 ns reverse recovery charge q rr i s =12a,v gs =0v, di f /dt=100a/s (note 2) -- 4.9 -- c notes: 1. l=30mh, i as =7.5a, v dd =245v, r g =25 , starting t j =25 c; 2. pulse test: pulse width 300 s,duty cycle 2%; 3. essentially independent of operating temperature. typical characteristics
SVD12N60T/f_datasheet typical characteristics (continued) hangzhou silan microelectronics co.,ltd rev:1.2 2010.10.21 http://www.silan.com.cn page 4 of 8
SVD12N60T/f_datasheet typical test circuit v gs 10v charge 12v 50k 300nf same type as dut dut v gs hangzhou silan microelectronics co.,ltd rev:1.2 2010.10.21 http://www.silan.com.cn page 5 of 8 3ma v ds qg qgs qgd gate charge test circuit & waveform resistive switching test circuit & waveform v ds v gs r g r l v dd 10v v ds v gs 10% 90% td(on) t on tr td(off) t off t f unclamped inductive switchi ng test circuit & waveform v ds r g v dd 10v l tp i d b vdss i as v dd tp time v ds(t) i d(t) e as = 1 - 2 li as 2 b vdss b vdss v dd dut dut 200nf
SVD12N60T/f_datasheet package outline to-220-3l unit: mm to-220f-3l unit: mm hangzhou silan microelectronics co.,ltd rev:1.2 2010.10.21 http://www.silan.com.cn page 6 of 8
SVD12N60T/f_datasheet hangzhou silan microelectronics co.,ltd rev:1.2 2010.10.21 http://www.silan.com.cn page 7 of 8 disclaimer: ? silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. ? all semiconductor products malfunction or fail with some probability under special conditions. when using silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such silan products could cause loss of body injury or damage to property. ? silan will supply the best possible product for customers!
SVD12N60T/f_datasheet hangzhou silan microelectronics co.,ltd rev:1.2 2010.10.21 http://www.silan.com.cn page 8 of 8 attachment revision history date rev description page 2010.05.25 1.0 original 2010.09.20 1.1 modify? absolute maximum ratings?; ?thermal characteristics?, add soa and id-tc 2010.10.21 1.2 modify? typical characteristics?, th e template of datasheet
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